six igbt nx-series module 100 amperes/1200 volts CM100TX-24S 1 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM100TX-24S is a 1200v (v ces ), 100 ampere six igbt power module. type current rating v ces amperes volts (x 50) cm 100 24 outline drawing and circuit diagram p(54~56) gwn(21) n1(23~25) c aution: each (thr ee) pin te r minal of p/n/p1/n1/u/v/w is connect ed in the module , ho we ve r, all thr ee pins should be used f or ex te r nal wir ing . gwp(1 7) e s wp(1 8) gvn(1 3) gvp(9) e s vp(1 0) gun(5) gup(1) e s up(2) e s wn(22) e s vn(1 4) e s un(6) u(48~50) v(42~44) w(36~38) n(59~61) th 1 (31) th 2 (32) p1(28~30) det ail "b" a aa p d e f g k k k k k k q k l v w z ah c ab r b n (4 pla ces) kk k k k k u x k k k k l k k k k l hl lll y s det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 j am mm m ac k ad af ae ag al ah t ak aj det ail "b" det ail "a" t olerance otherwise specif ied (mm) the t olerance of siz e bet ween te r minals is assumed to 0.4 division of dimension t olerance 0.5 to 3 0.2 ov er 3 to 6 0.3 ov er 6 to 30 0.5 ov er 30 to 1 20 0.8 ov er 1 20 to 400 1 .2 dimensions inches millimeters a 4.79 121.7 b 2.44 62.0 c 0.51 13.0 d 4.49 114.05 e 4.330.02 110.00.5 f 3.9 99.0 g 3.72 94.5 h 0.59 15.0 j 0.96 24.52 k 0.15 3.81 l 0.45 11.43 m 0.6 15.24 n 0.22 dia. 5.5 dia. p 2.13 54.2 q 0.30 7.75 r 1.970.02 50.00.5 s 2.26 57.5 t 0.165 4.2 dimensions inches millimeters u 0.16 4.06 v 0.46 11.66 w 0.14 3.75 x 0.14 3.5 y 0.03 0.8 z 0.28 7.0 aa 0.81 20.5 ab 0.67 17.0 ac 0.03 0.65 ad 0.05 1.15 ae 0.29 7.4 af 0.047 1.2 ag 0.49 12.5 ah 0.12 3.0 aj 0.17 dia. 4.3 dia. ak 0.102 dia. 2.6 dia. al 0.088 dia. 2.25 dia am 1.53 39
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 2 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 119c) *2,*4 i c 100 amperes collector current (pulse) *3 i crm 200 amperes total power dissipation (t c = 25c) *2,*4 p tot 750 watts emitter current (t c = 25c) *2 i e *1 100 amperes emitter current (pulse) *3 i erm *1 200 amperes module characteristics symbol rating units isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts maximum junction temperature, instantaneous event (overload) t j(max) 175 c maximum case temperature *4 t c(max) 125 c operating junction temperature, continuous operation (under switching) t j(op) -40 to +150 c storage temperature t stg -40 to +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.2 29.5 label side each mark points to the center position of each chip. tr*p / tr*n: igbt di*p / di*n: fwdi th: ntc thermistor 20.6 0 33.7 51.6 64.7 82.6 95.7 24.1 104.5 di up di vp di wp tr up tr vp tr wp di un di vn di wn tr un tr vn tr wn th
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 3 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c *5 1.80 2.25 volts (terminal) i c = 100a, v ge = 15v, t j = 125c *5 2.00 volts i c = 100a, v ge = 15v, t j = 150c *5 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c *5 1.70 2.15 volts (chip) i c = 100a, v ge = 15v, t j = 125c *5 1.90 volts i c = 100a, v ge = 15v, t j = 150c *5 1.95 volts input capacitance c ies 10 nf output capacitance c oes v ce = 10v, v ge = 0v 2.0 nf reverse transfer capacitance c res 0.17 nf gate charge q g v cc = 600v, i c = 100a, v ge = 15v 233 nc turn-on delay time t d(on) 300 ns rise time t r v cc = 600v, i c = 100a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 6.2?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 100a, v ge = 0v, t j = 25c *5 1.80 2.25 volts (terminal) i e = 100a, v ge = 0v, t j = 125c *5 1.80 volts i e = 100a, v ge = 0v, t j = 150c *5 1.80 volts emitter-collector voltage v ec *1 i e = 100a, v ge = 0v, t j = 25c *5 1.70 2.15 volts (chip) i e = 100a, v ge = 0v, t j = 125c *5 1.70 volts i e = 100a, v ge = 0v, t j = 150c *5 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 100a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 6.2?, inductive load 5.3 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 100a, v ge = 15v 8.6 mj turn-off switching energy per pulse e off r g = 6.2?, t j = 150c 10.7 mj reverse recovery energy per pulse e rr *1 inductive load 10.2 mj internal lead resistance r cc' + ee' main terminals-chip, 3.5 m? per switch,t c = 25c *4 internal gate resistance r g per switch 0 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.2 29.5 label side each mark points to the center position of each chip. tr*p / tr*n: igbt di*p / di*n: fwdi th: ntc thermistor 20.6 0 33.7 51.6 64.7 82.6 95.7 24.1 104.5 di up di vp di wp tr up tr vp tr wp di un di vn di wn tr un tr vn tr wn th
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 4 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c *4 , r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per inverter igbt 0.20 k/w thermal resistance, junction to case *4 r th(j-c) d per inverter fwdi 0.29 k/w contact thermal resistance, r th(c-f) thermal grease applied, 15 k/kw case to heatsink *4 per 1 module *7 mechanical characteristics mounting torque m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 10.28 mm terminal to baseplate 14.27 mm clearance d a terminal to terminal 10.28 mm terminal to baseplate 12.33 mm weight m 300 grams flatness of baseplate e c on centerline x, y *8 0 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across p-n terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across 13.5 15.0 16.5 volts g*p-es*p/g*n-es*n (* = u, v, w) terminals external gate resistance r g per switch 6.2 62 ? *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. heatsink side ? : concave + : convex ? : concave x y + : convex heatsink side 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.2 29.5 label side each mark points to the center position of each chip. tr*p / tr*n: igbt di*p / di*n: fwdi th: ntc thermistor 20.6 0 33.7 51.6 64.7 82.6 95.7 24.1 104.5 di up di vp di wp tr up tr vp tr wp di un di vn di wn tr un tr vn tr wn th
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 5 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 1.0 0.5 2.5 1.5 2.0 3.0 10 0 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 1 10 3 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 200a i c = 100a i c = 40a collector-emitter voltage, v ce , (volts) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 200 100 50 150 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (chip - typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 200 100 50 150 v ge = 15v t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts )
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 6 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load t f 10 2 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.2 t j = 150c inductive load t f 10 2 gate resistance, r g , (?) collector current, i c , (amperes) 10 3 10 0 10 1 10 1 10 2 switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 100a t j = 125c inductive load t f 10 2 capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns)
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 7 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , (?) 10 3 10 0 10 1 10 1 10 2 switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 100a t j = 150c inductive load t f 10 2 gate charge, q g , (nc) gate charge vs. v ge 20 0 15 10 5 0 100 200 300 400 i c = 100a v cc = 600v emitter current, i e , (amperes) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 1 10 2 v cc = 600v v ge = 15v r g = 6.2 t j = 150c inductive load i rr t rr reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 1 10 2 v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load i rr t rr switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns)
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 8 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) 10 2 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 6.2 t j = 125c v cc = 600v v ge = 15v i c = 100a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) 10 2 10 0 10 0 10 1 10 -1 10 2 half-bridge switching characteristics (typical) e on e off e rr v cc = 600v v ge = 15v r g = 6.2 t j = 150c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) 10 2 10 1 10 1 10 0 10 0 10 1 10 -1 10 2 half-bridge switching characteristics (typical) e on e off e rr gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) 10 2 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v i c = 100a t j = 150c e on e off e rr e on e off e rr
CM100TX-24S six igbt nx-series module 100 amperes/1200 volts 9 03/13 rev. 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.20k/w (igbt) r th(j-c) = 0.29k/w (fwdi) normalized transient thermal impedance, z th(j-c')
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